AO4496 product summary v d s (v) = 30v i d = 10a (v gs = 10v) r ds(on) < 19.5m ? (v gs = 10v) r ds(on) < 26m ? (v gs = 4.5v) 100% uis tested 100% rg tested general description t he AO4496 uses advanced trench technology to provide excellent r ds(on) with low gate charge. this device is suitable for use as a dc-dc converter application. soic-8 t op view bottom view d d d symbol v ds v gs i dm i ar e ar t j , t stg parameter symbol typ max t 10s 31 40 steady state 59 75 steady state r q j l 16 2 4 w 20 c/w r q j a c - 55 to 150 2.0 absolute maximum ratings t j =25c unless otherwise noted p d maximum junction-to-lead c c/w t hermal characteristics units maximum junction-to-ambient a c/w maximum junction-to-ambient a units parameter t a =25c t a =70c v v i d gate-source voltage d rain-source voltage 30 pulsed drain current b avalanche current g continuous drain c urrent a power dissipation a t a =25c j unction and storage temperature range t a =70c maximum 10 7 .5 3.1 repetitive avalanche energy l=0.1mh g mj 5 0 a 17 14 d d d s s s g g s alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4496 symbol min typ max units bv dss 30 v 1 t j = 55c 5 i gss 100 na v gs(th) 1.4 1.8 2.5 v i d(on) 50 a 16 19.5 t j =125c 24 29 21 26 g fs 30 s v sd 0.76 1 v i s 3 a c iss 550 715 pf c oss 110 pf c rss 55 pf r g 3 4 4.9 w maximum body-diode continuous current v gs =0v, v ds =0v, f=1mhz v gs =0v, v ds =15v, f=1mhz input capacitance m a output capacitance i s = 1a,v gs = 0v v ds = 5v, i d = 10a forward transconductance gate resistance switching parameters dynamic parameters m w gate threshold voltage v ds = v gs i d = 250 m a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss r ds(on) drain-source breakdown voltage v gs = 10v, i d = 10a reverse transfer capacitance static drain-source on-resistance diode forward voltage v gs = 4.5v, i d = 7.5a on state drain current i d = 250 m a, v gs = 0v v gs = 10v, v ds = 5v v ds = 30v, v gs = 0v v ds = 0v, v gs = 20v zero gate voltage drain current gate-body leakage current alpha & omega semiconductor, ltd. www.aosmd.com q g (10v) 9.8 13 nc q g (4.5v) 4.6 6.1 nc q gs 1.8 nc q gd 2.2 nc t d(on) 5 ns t r 3.2 ns t d(off) 24 ns t f 6 ns t rr 22 29 ns q rr 14 nc 0 this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. total gate charge total gate charge v gs =10v, v ds =15v, i d =10a switching parameters turn-off delaytime v gs =10v, v ds =15v, r l = 1.5 w , r gen =3 w turn-off fall time turn-on delaytime turn-on rise time gate source charge gate drain charge body diode reverse recovery time body diode reverse recovery charge i f =10a, di/dt=500a/ m s i f =10a, di/dt=500a/ m s a: the value of r q ja i s measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a = 25 c. the value in any given application depends on the user's specific board design. b: repetitive rating, pulse width limited by junction temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using t 300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25 c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s thermal resistance rating. g. e ar and i ar ratings are based on low frequency and duty cycles to keep t j =25c. rev5: nov. 2010 alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4496 typical electrical and thermal characteristics 0 1 0 20 30 40 50 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics 4v 4.5v 10v 3.5v 0 1 0 20 30 40 50 1 2 3 4 5 i d (a) v gs (volts) figure 2: transfer characteristics 25 c 125 c v d s = 5v 20 22 2 4 26 ds(on) (m w w w w ) v g s = 4.5v 1.4 1 .6 1.8 normalized on -resistance v g s = 3v v g s = 10v i d = 10a v g s = 4.5v i d = 7.5a alpha & omega semiconductor, ltd. www.aosmd.com i f =-6.5a, di/dt=100a/ m s 14 1 6 18 20 0 5 10 15 20 25 30 r ds(on) i d ( a) figure 3: on-resistance vs. drain current and gate voltage v g s = 10v 1e-06 1 e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.8 1 .0 1.2 0 25 50 75 100 125 150 175 normalized on temperature (c) f igure 4: on-resistance vs. junction temperature 10 1 5 20 25 30 35 40 45 50 2 4 6 8 10 r ds(on) (m w w w w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage i d = 10a 25 c 125 c alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4496 typical electrical and thermal characteristics 0 2 4 6 8 10 0 2 4 6 8 10 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 2 00 400 600 800 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c o ss c r ss 100 1 000 power (w) 1 10 (amps) r ds(on) limited 100 m s 1 ms 10 m s v d s = 15v i d = 10a t j (max) =150 c t a =25 c alpha & omega semiconductor, ltd. www.aosmd.com i f =-6.5a, di/dt=100a/ m s this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 1 1 0 0.0001 0.01 1 100 power (w) pulse width (s) f igure 10: single pulse power rating junction- to-ambient (note e) 0.001 0 .01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impedance(note e) 0.01 0 .1 1 0.1 1 1 0 100 i d (amps) v d s (volts) figure 9: maximum forward biased safe operating area (note e) ds(on) limited t j (max) =150 c t a =25 c 10 ms 100 mss 10 s dc single pulse d=t o n /t t j,pk =t a +p dm .z q ja .r q ja r q ja =75 c/w t on t p d in descending order d =0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4496 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d (on) t d(off) t f alpha & omega semiconductor, ltd. www.aosmd.com t on t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
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